Mechanical stress caused frequency drift in cryogenic sapphire resonators

被引：12

作者：

Chang, S ^{[1
]}

Mann, AG ^{[1
]}

机构：

[1] Bliley Technol Inc, Erie, PA 16506 USA

来源：

PROCEEDINGS OF THE 2001 IEEE INTERNATIONAL FREQUENCY CONTROL SYMPOSIUM & PDA EXHIBITION | 2001年

关键词：

D O I：

10.1109/FREQ.2001.956368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By comparing the drift rate between two nominally identical resonators, each with a choice of two closely spaced modes having a different electromagnetic configuration (E mode and H mode), it was found that variation of mechanical stress in the sapphire element induced by its mounting structure was the origin of the frequency drift of UWA 6K sapphire oscillator reported in [1][2]. Discussions on the previously proposed mechanisms accounting for the oscillator residual frequency drift [1][2] and measurement results on the relative frequency drift rate between a pair of resonators with different mechanical mounting structures are presented.

引用

页码：710 / 714

页数：5

共 10 条

[1]

BLAIR DG, 1996, JPL PUB, V9715, P101

[2]

BRAGINSKY VB, 1985, SYSTEM SMALL DISSIPA

[3] Cryogenic sapphire oscillator with improved frequency stability [J].