Low-temperature diffusion of lithium in silicon-germanium solid solutions

被引：4

作者：

Atabaev, IG ^{[1
]}

Matchanov, NA ^{[1
]}

Bakhranov, ÉN ^{[1
]}

机构：

[1] Uzbek Acad Sci, Phys Sun Res & Prod Assoc, Inst Physicotech, Tashkent 700084, Uzbekistan

来源：

PHYSICS OF THE SOLID STATE | 2001年 / 43卷 / 12期

关键词：

Spectroscopy; Lithium; State Physics; Solid Solution; Diffusion Coefficient;

D O I：

10.1134/1.1427947

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of germanium content on lithium diffusion in Si1-xGex solid solutions is investigated at temperatures from 300 to 500 degreesC. It is found that the diffusion coefficient and the solubility of lithium abruptly decrease with a decrease in the temperature and an increase in the germanium content. As the diffusion temperature increases, the decrease in the lithium diffusion coefficient slows down with a change in the solid solution composition due to the effect of lattice elastic strains induced by germanium isovalent impurities. (C) 2001 MAIK "Nauka/Interperiodica".

引用

页码：2234 / 2236

页数：3

共 10 条

[1]

Atabaev I. G., 1996, Physics of the Solid State, V38, P1286

[2]

Azimov S.A., 1981, SILICON LITHIUM NUCL

[3]

BOTAVIN VV, 1976, PARAMETER CONTROL SE

[4]

Glazov V. M., 1967, PHYSICOCHEMICAL PRIN

[5]

SAIDOV MS, 1981, SOV PHYS SEMICOND+, V15, P704

[6] SI-GE SOLID-SOLUTION SINGLE-CRYSTAL GROWTH BY ELECTRON-BEAM FLOATING ZONE TECHNIQUE [J].

SAIDOV, MS ;

YUSUPOV, A ;

UMEROV, RS .

JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) :514-518

[7]

SAIDOV MS, 1986, P 6 COORD C INV SIL, P21

[8]

SAIDOV MS, 1998, UZB FIZ ZH, P25

[9]

SAIDOV MS, 1994, ATOM ENERG, V81, P56

[10]

SAIDOV MS, 1994, UZB FIZ ZH, P75

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