CIGSSe thin film PV modules:: from fundamental investigations to advanced performance and stability

被引：64

作者：

Palm, J ^{[1
]}

Probst, V ^{[1
]}

Stetter, W ^{[1
]}

Toelle, R ^{[1
]}

Visbeck, S ^{[1
]}

Calwer, H ^{[1
]}

Niesen, T ^{[1
]}

Vogt, H ^{[1
]}

Hernández, O ^{[1
]}

Wendl, M ^{[1
]}

Karg, FH ^{[1
]}

机构：

[1] Shell Solar GmbH, D-81739 Munich, Germany

来源：

THIN SOLID FILMS | 2004年 / 451卷

关键词：

Cu(In; Ga)(Se; S)(2); Ga)Se-2; sulfurization; Cd-free buffer; damp heat stability;

D O I：

10.1016/j.tsf.2003.10.160

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A process for high efficiency large area Cu(ln,Ga)(Se,S)(2) (CIGSSe) thin film solar modules is developed applying rapid thermal processing and controlled sodium doping. Continuous optimization aims at sufficient process maturity for a successful transfer into cost-effective mass production. The pilot line yields aperture area efficiencies of 11% (average) for 30 X 30 cm(2) modules and a certified champion efficiency of 13.1% for the first 60 X 90 cm(2) demonstrator module (unencapsulated). First Cd-free 30 X 30 cm(2) circuits yield up to 11.9% efficiency applying CBD-Zn (S,OH)-buffer layers. Investigations on the absorber formation by structural, compositional and electrical characterization will be given. Models for the Ga and S distribution will be discussed and experimentally verified. A favorable double band gap grading structure is accomplished by controlled sulfur profiling and by a process induced gallium accumulation towards the back electrode. The stability of the frameless low-cost packaged pilot line modules against humidity is confirmed externally by passing the damp heat test sequence according to IEC 61646. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：544 / 551

页数：8

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