Luminescence related to stacking faults in heteroepitaxially grown wurtzite GaN

被引：51

作者：

Albrecht, M

Christiansen, S

Salviati, G

ZanottiFregonara, C

Rebane, YT

Shreter, YG

Mayer, M

Pelzmann, A

Kamp, M

Ebeling, KJ

Bremser, MD

Davis, RD

Strunk, HP

机构：

来源：

GALLIUM NITRIDE AND RELATED MATERIALS II | 1997年 / 468卷

关键词：

D O I：

10.1557/PROC-468-293

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We correlate structure analyzed by transmission electron microscopy with photo-and cathodoluminescence studies of GaN/Al2O3(0001) and GaN/SiC(0001) and show that an additional UV line at 364nm/3.4eV can be connected to the occurrence of stacking faults. We explain the occurrence of this line by a model that is based on the concept of excitons bound to stacking faults that form a quantum well of cubic material in the wurtzite lattice of the layer material. The model is in reasonable agreement with the experimental observations.

引用

页码：293 / 298

页数：6