High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature

被引：61

作者：

Fortunato, E ^{[1
]}

Pimentel, A ^{[1
]}

Gonçalves, A ^{[1
]}

Marques, A ^{[1
]}

Martins, R ^{[1
]}

机构：

[1] Univ Lisbon, Fac Sci & Technol, Mat Sci Dept CENIMAT, Lisbon, Portugal

来源：

THIN SOLID FILMS | 2006年 / 502卷 / 1-2期

关键词：

indium zinc oxide; optical coatings; electrical properties and measurements; sputtering;

D O I：

10.1016/j.tsf.2005.07.311

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we present results of indium zinc oxide deposited at room temperature by rf magnetron sputtering, with an electron mobility as high as 60 cm(2)/Vs. The films present a resistivity as low as 5 x 10(-4) Omega cm, with an optical transmittance of 85%. The structure of these films seems to be polymorphous (mix of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns with a smooth surface and from SEM micrographs, is highly important to ensure a long lifetime when used in display devices. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：104 / 107

页数：4

共 9 条

[1] Magnetron sputtering of transparent conductive zinc oxide: relation between the sputtering parameters and the electronic properties [J].

Ellmer, K .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2000, 33 (04) :R17-R32

[2]

HARTNAGEL H., 1995, Semiconducting Transparent Thin Films

[3] Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film [J].

Jung, YS ;

Seo, HY ;

Lee, DW ;

Jeon, DY .

THIN SOLID FILMS, 2003, 445 (01) :63-71

[4] Transport in high mobility amorphous wide band gap indium zinc oxide films [J].

Martins, R ;

Barquinha, P ;

Pimentel, A ;

Pereira, L ;

Fortunato, E .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (09) :R95-R97

[5]

Minami T., 1996, THIN SOLID FILMS, P290

[6] Structural and physical characterisation of transparent conducting pulsed laser deposited In2O3-ZnO thin films [J].

Naghavi, N ;

Marcel, C ;

Dupont, L ;

Rougier, A ;

Leriche, JB ;

Guéry, C .

JOURNAL OF MATERIALS CHEMISTRY, 2000, 10 (10) :2315-2319

[7] Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target [J].

Naghavi, N ;

Rougier, A ;

Marcel, C ;

Guéry, C ;

Leriche, JB ;

Tarascon, JM .

THIN SOLID FILMS, 2000, 360 (1-2) :233-240

[8] Influence of tin doping on the structural and physical properties of indium-zinc oxides thin films deposited by pulsed laser deposition [J].

Naghavi, N ;

Marcel, C ;

Dupont, L ;

Guéry, C ;

Maugy, C ;

Tarascon, JM .

THIN SOLID FILMS, 2002, 419 (1-2) :160-165

[9] Comparative study on structure and internal stress in tin-doped indium oxide and indium-zinc oxide films deposited by r.f. magnetron sputtering [J].

Sasabayashi, T ;

Ito, N ;

Nishimura, E ;

Kon, M ;

Song, PK ;

Utsumi, K ;

Kaijo, A ;

Shigesato, Y .

THIN SOLID FILMS, 2003, 445 (02) :219-223

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