Atomic force microscopy on (001) surfaces of GaAs MOVPE layers

被引：4

作者：

Pietzonka, I

Hirsch, D

Gottschalch, V

Schwabe, R

Franzheld, R

Bente, K

Bigl, F

机构：

[1] UNIV LEIPZIG,FAK CHEM & MINERAL,INST MINERAL KRISTALLOG & MAT WISSENSCH,D-04275 LEIPZIG,GERMANY

[2] INST OBERFLACHENMODIFIZIERUNG EV,D-04318 LEIPZIG,GERMANY

来源：

CHEMICAL VAPOR DEPOSITION | 1996年 / 2卷 / 02期

关键词：

D O I：

10.1002/cvde.19960020204

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Low dimensional material are widely used in novel opto- and or microelectric devices. Thus, it is of importance and fundamental interest to determine the correlation between variation of the crystal surface during growth and in situ development of microstructures. This paper reports on multistep formation of MOVPE GaAs analyzed by AFM, presenting and discussing images and cross-section measurements of GaAs layers grown under various conditions.

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页码：44 / 48

页数：5

相关论文

共 15 条

[1] FORMATION OF COHERENTLY STRAINED SELF-ASSEMBLED INP QUANTUM ISLANDS ON INGAP/GAAS(001) [J].

DENBAARS, SP ;

REAVES, CM ;

BRESSLERHILL, V ;

VARMA, S ;

WEINBERG, WH ;

PETROFF, PM .

JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :721-727

[2]

EPLER JE, 1993, APPL PHYS LETT, V62, P11

[3] MULTIATOMIC STEP FORMATION MECHANISM OF METALORGANIC VAPOR-PHASE EPITAXIAL GROWN GAAS VICINAL SURFACES AND ITS APPLICATION TO QUANTUM-WELL WIRES [J].

FUKUI, T ;

ISHIZAKI, J ;

HARA, S ;

MOTOHISA, J ;

HASEGAWA, H .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :183-187

[4] FORMATION AND PHOTOLUMINESCENCE CHARACTERIZATION OF QUANTUM-WELL WIRES USING MULTIATOMIC STEPS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

HARA, S ;

ISHIZAKI, J ;

MOTOHISA, J ;

FUKUI, T ;

HASEGAWA, H .

JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :692-697

[5] SPIRAL GROWTH OF GAAS BY METALORGANIC VAPOR-PHASE EPITAXY [J].

HSU, CC ;

LU, YC ;

XU, JB ;

WONG, TKS ;

WILSON, IH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (03) :2115-2117

[6] INTERFACE STRUCTURES IN GAAS/AL(GA)AS QUANTUM-WELLS CONTROLLED BY METALORGANIC VAPOR-PHASE EPITAXY AND MOLECULAR-BEAM EPITAXY [J].

INOUE, N ;

IKUTA, K ;

SHINOHARA, M ;

OSAKA, J .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :379-383

[7] MECHANISM OF MULTIATOMIC STEP FORMATION DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS ON (001) VICINAL SURFACE STUDIED BY ATOMIC-FORCE MICROSCOPY [J].

ISHIZAKI, JY ;

GOTO, S ;

KISHIDA, M ;

FUKUI, T ;

HASEGAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (1B) :721-726

[8] EQUILIBRIUM MULTIATOMIC STEP STRUCTURE OF GAAS(001) VICINAL SURFACES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KASU, M ;

KOBAYASHI, N .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1262-1264

[9] MULTIATOMIC STEPS ON METALORGANIC CHEMICAL VAPOR DEPOSITION-GROWN GAAS VICINAL SURFACES STUDIED BY ATOMIC FORCE MICROSCOPY [J].

KASU, M ;

FUKUI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (7A) :L864-L866

[10] EFFECT OF STRAINED INGAAS STEP BUNCHING ON MOBILITY AND DEVICE PERFORMANCE IN N-INGAP/INGAAS/GAAS PSEUDOMORPHIC HETEROSTRUCTURES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY [J].

KIKKAWA, T ;

MAKIYAMA, K ;

OCHIMIZU, H ;

KASAI, K ;

KOMENO, J .

JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) :799-807