Magnetron sputtering growth and characterization of high quality single crystal ZnO thin films on sapphire substrates

被引：30

作者：

Kim, IS ^{[1
]}

Jeong, SH ^{[1
]}

Kim, SS ^{[1
]}

Lee, BT ^{[1
]}

机构：

[1] Chonnam Natl Univ, Dept Mat Sci & Engn, Photon & Elect Thin Film Lab, Kwangju 500757, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2004年 / 19卷 / 03期

关键词：

D O I：

10.1088/0268-1242/19/3/L06

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO films were grown on sapphire substrates by rf magnetron sputtering and their structural and optical properties were characterized in detail. It was observed that high quality single crystal ZnO films are obtained when grown at high temperature (>600 degreesC) and low plasma power in oxygen-rich ambient. Films grown at 800 degreesC and 75 W in pure O-2 showed sharp and intense photoluminescence (PL) and high resolution x-ray diffraction (XRD) peaks, with full-width-at-half-maximum values of 155 meV (room temperature PL), 23 meV (12 K PL) and 280 arcsec (XRD), which is comparable with previously reported values from ZnO films grown by more sophisticated techniques such as metal-organic chemical vapour deposition.

引用

页码：L29 / L31

页数：3

共 13 条

[1] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[2] Photoluminescence dependence of ZnO films grown on Si(100) by radio-frequency magnetron sputtering on the growth ambient [J].

Jeong, SH ;

Kim, BS ;

Lee, BT .

APPLIED PHYSICS LETTERS, 2003, 82 (16) :2625-2627

[3]

Kashiwaba Y, 2002, PHYS STATUS SOLIDI B, V229, P921, DOI 10.1002/1521-3951(200201)229:2<921::AID-PSSB921>3.0.CO

[4]

2-N

[5] Photoluminescence and heteroepitaxy of ZnO on sapphire substrate (0001) grown by rf magnetron sputtering [J].

Kim, KK ;

Song, JH ;

Jung, HJ ;

Choi, WK ;

Park, SJ ;

Song, JH ;

Lee, JY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (06) :2864-2868

[6] The grain size effects on the photoluminescence of ZnO/α-Al2O3 grown by radio-frequency magnetron sputtering [J].

Kim, KK ;

Song, JH ;

Jung, HJ ;

Choi, WK ;

Park, SJ ;

Song, JH .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (07) :3573-3575

[7] Investigation of ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy [J].

Ko, HJ ;

Yao, T ;

Chen, YF ;

Hong, SK .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) :4354-4360

[8] Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3, heterostructures [J].

Narayan, J ;

Dovidenko, K ;

Sharma, AK ;

Oktyabrsky, S .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (05) :2597-2601

[9] ZnO growth using homoepitaxial technique on sapphire and Si substrates by metalorganic vapor phase epitaxy [J].

Ogata, K ;

Kawanishi, T ;

Maejima, K ;

Sakurai, K ;

Fujita, S ;

Fujita, S .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 :553-557

[10] Growth condition dependence of morphology and electric properties of ZnO films on sapphire substrates prepared by molecular beam epitaxy [J].

Ohgaki, T ;

Ohashi, N ;

Kakemoto, H ;

Wada, S ;

Adachi, Y ;

Haneda, H ;

Tsurumi, T .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (04) :1961-1965

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