Collector-up AlGaAs/GaAs heterojunction bipolar transistors using oxidised AlAs for current confinement

被引：9

作者：

Massengale, A

Larson, MC

Dai, C

Harris, JS

机构：

[1] Solid State Electronics Laboratory, 226 McCulloch Building, Stanford University, Stanford

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 04期

关键词：

heterojunction bipolar transistors; aluminium gallium arsenide; gallium arsenide;

D O I：

10.1049/el:19960261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors describe a novel method for fabricating collector-up AlGaAs/GaAs heterojunction bipolar transistors. An AlAs layer is inserted into the emitter layer and is oxidised in water vapour at 450 degrees C. The resulting AlAs-oxide serves as a current confining layer that constricts collector current flow to the intrinsic portion of the device. DC devices with typical current gains of 50 are observed.

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页码：399 / 401

页数：3

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