Deep Levels and Space Charge Distribution in Cu(In,Ga)Se2 Photovoltaic Devices

被引：5

作者：

Igalson, Malgorzata ^{[1
]}

Stolt, Lars ^{[2
]}

机构：

[1] Warsaw Univ Technol, Inst Phys, PL-00662 Warsaw, Poland

[2] Uppsala Univ, Angstrom Solar Ctr, S-75121 Uppsala, Sweden

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2000年 / 39卷 / 01期

关键词：

deep levels; capacitance; Cu(In; Ga)Se-2; photovoltaic devices;

D O I：

10.7567/JJAPS.39S1.426

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO/CdS/Cu(In,Ga)Se-2 photovoltaic devices have been investigated at low temperatures after the samples have been subjected to various forward and reverse biases or illumination at room temperature and during cool-down. The C-V characteristics has been measured and interpreted as distorted by a charge captured in more than 2.10(22) m(-3) of deep traps. Subsequent illumination by use of red and blue light reveals very high concentration of midgap centers in the 10-20 nm layer of absorber close to the heterointerface. Their presence might be a source of efficiency losses previously attributed to the defects in CdS.

引用

页码：426 / 427

页数：2

共 6 条

[1]

HEDSTROM J, 1993, IEEE PHOT SPEC CONF, P364, DOI 10.1109/PVSC.1993.347154

[2]

Herberholz R, 1998, INST PHYS CONF SER, V152, P733

[3] The metastable changes of the trap spectra of CuInSe2-based photovoltaic devices [J].