Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing

被引：42

作者：

Hu, TC

Chiu, SY

Dai, BT

Tsai, MS

Tung, IC

Feng, MS ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30050, Taiwan

[2] Natl Nano Device Labs, Hsinchu 30050, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 1999年 / 61卷 / 02期

关键词：

chemical mechanical polishing; inhibitor; copper; citric acid; nitric acid;

D O I：

10.1016/S0254-0584(99)00138-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel inhibitor, citric acid, was introduced in the HNO3-based slurry for copper chemical mechanical polishing. It was anticipated that a passivation layer could be formed on the copper surface in the presence of citric acid. In a 3 vol.% HNO3 solution, the passivation effect derived from citric acid saturated as the citric acid concentration reached ca. 0.01 M. The polishing rate was found to decrease with the addition of citric acid. The results showed that the HNO3-based slurry with citric acid as an inhibitor could achieve good surface planarity for copper chemical mechanical polishing. (C) 1999 Published by Elsevier Science S.A. All rights reserved.

引用

页码：169 / 171

页数：3

共 8 条

[1]

Chin B, 1998, SOLID STATE TECHNOL, V41, P141

[2] Chemical-mechanical polishing of copper in alkaline media [J].