ITO/PVK/Alq/metal LEDs:: influence of PVK doping with DCM and of passivation with sputtered Si3N4

被引：4

作者：

Berthelot, L ^{[1
]}

Tardy, J ^{[1
]}

Garrigues, M ^{[1
]}

Cremillieu, P ^{[1
]}

Joseph, J ^{[1
]}

Masenelli, B ^{[1
]}

机构：

[1] Ecole Cent Lyon, CNRS, UMR 5512, LEAME,Lab Elect, F-69131 Ecully, France

来源：

OPTICAL MATERIALS | 1999年 / 12卷 / 2-3期

关键词：

D O I：

10.1016/S0925-3467(99)00052-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reports on the fabrication and on the characterization of LEDs consisting of two layers: a spinned-on hole transport layer, PVK layer and an evaporated tris(8-hydroxy) quinoline aluminum (Alq) emitter and an electron injection layer. Dye-doping of PVK with DCM induced a red shift of the spectrum due to concomitant emission from Alq and DCM. Some devices were passivated with Si3N4 deposited by RF sputtering. In that latter case, the threshold voltage of the LED slightly increased, but the emitted power was kept constant. The LED surface was imaged with a lateral resolution as low as 30 mu mm using Scanning ElectroLuminescence Imaging Microscopy (SELIM), a technique derived from the well-known Scanning Photo-Luminescence (SPL) widely used for III-V and II-VI semiconductors. This technique was successfully used to assess the lateral homogeneity of the emitting surface, and the aging of the diodes. At increasing working time, the devices did not show dark spots formation but a uniform decrease of the luminescence. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：261 / 266

页数：6

共 23 条

[1]

BERTHELOT L, IN PRESS

[2] Imaging of the ageing on organic electroluminescent diodes, under different atmospheres by impedance spectroscopy, scanning electron microscopy and SIMS depth profiling analysis [J].

Bijnens, W ;

Manca, J ;

Wu, TD ;

DOlieslaeger, M ;

Vanderzande, D ;

Gelan, J ;

DeCeuninck, W ;

DeSchepper, L ;

Stals, LM .

SYNTHETIC METALS, 1996, 83 (03) :261-265

[3] RELIABILITY AND DEGRADATION OF ORGANIC LIGHT-EMITTING DEVICES [J].

BURROWS, PE ;

BULOVIC, V ;

FORREST, SR ;

SAPOCHAK, LS ;

MCCARTY, DM ;

THOMPSON, ME .

APPLIED PHYSICS LETTERS, 1994, 65 (23) :2922-2924

[4] Naphthalimide side-chain polymers for organic light-emitting diodes: Band-offset engineering and role of polymer thickness [J].

Cacialli, F ;

Friend, RH ;

Bouche, CM ;

Le Barny, P ;

Facoetti, H ;

Soyer, F ;

Robin, P .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :2343-2356

[5] Failure phenomena and mechanisms of polymeric light-emitting diodes: Indium-tin-oxide-damage [J].

Chao, CI ;

Chuang, KR ;

Chen, SA .

APPLIED PHYSICS LETTERS, 1996, 69 (19) :2894-2896

[6] Electromigration of aluminum cathodes in polymer-based electroluminescent devices [J].

Cumpston, BH ;

Jensen, KF .

APPLIED PHYSICS LETTERS, 1996, 69 (25) :3941-3943

[7] In situ investigation of degradation in polymeric electroluminescent devices using time-resolved confocal laser scanning microscope [J].

Do, LM ;

Kim, KJ ;

Zyung, T ;

Shim, HK ;

Kim, JJ .

APPLIED PHYSICS LETTERS, 1997, 70 (25) :3470-3472

[8] OBSERVATION OF DEGRADATION PROCESSES OF AL ELECTRODES IN ORGANIC ELECTROLUMINESCENCE DEVICES BY ELECTROLUMINESCENCE MICROSCOPY, ATOMIC FARCE MICROSCOPY, SCANNING ELECTRON-MICROSCOPY, AND ANGER ELECTRON-SPECTROSCOPY [J].

DO, LM ;

HAN, EM ;

NIIDOME, Y ;

FUJIHIRA, M ;

KANNO, T ;

YOSHIDA, S ;

MAEDA, A ;

IKUSHIMA, AJ .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (09) :5118-5121

[9] Growth of dark spots by interdiffusion across organic layers in organic electroluminescent devices [J].

Fujihira, M ;

Do, LM ;

Koike, A ;

Han, EM .

APPLIED PHYSICS LETTERS, 1996, 68 (13) :1787-1789

[10] Blue light-emitting diodes with doped polymers [J].

Gautier, E ;

Nunzi, JM ;

Sentein, C ;

Lorin, A ;

Raimond, P .

SYNTHETIC METALS, 1996, 81 (2-3) :197-200

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