Langmuir-Blodgett films of known layered solids: Preparation and structural properties of octadecylphosphonate bilayers with divalent metals and characterization of a magnetic Langmuir-Blodgett film

被引:107
作者
Seip, CT
Granroth, GE
Meisel, MW
Talham, DR
机构
[1] UNIV FLORIDA,DEPT PHYS,GAINESVILLE,FL 32611
[2] UNIV FLORIDA,CTR ULTRALOW TEMP RES,GAINESVILLE,FL 32611
[3] UNIV FLORIDA,DEPT CHEM,GAINESVILLE,FL 32611
关键词
D O I
10.1021/ja963598c
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Langmuir-Bodgett (LB) films of a series of divalent metal octadecylphosphonates have been prepared and characterized. The films are each shown to be LB analogs of known solid-state metal phosphonates possessing 2-dimensional ionic-covalent metal phosphonate layers. The metal phosphonate layers crystallize during the LB deposition process. Films were characterized with XPS, X-ray diffraction, ellipsometry, attenuated total reflectance FTIR, and, in the case of the manganese film, SQUID magnetometry. Octadecylphosphonate films with Mn2+, Mg2+, and Cd2+ form with the stoichiometry M(O3PC17H37). H2O and have metal phosphonate bonding consistent with the analogous M(O3PR). H2O layered solids. The Ca2+ film forms as Ca(HO3PC18H37)(2), which is also a known solid-state phase. Magnetic measurements reveal that the manganese octadecylphosphonate film undergoes a magnetic ordering transition at 13.5 K resulting in a ''weak ferromagnet''. The behavior is similar to that of the known layered solid-state manganese alkylphosphonates which are also ''weak ferromagnets''. The magnetic ordering is antiferromagnetic where incomplete cancellation of the magnetic sublattices, due to low site symmetry, results in a spontaneous magnetization. A spin-flop transition is observed at 2.5 T in magnetization vs applied field measurements of the ordered state. The film also exhibits magnetic memory, with a small remnant magnetization and a coercive field of 20 mT at 2 K. The results demonstrate that magnetic ordering phenomena can be incorporated into LB films and that LB film methods can be used to prepare monolayer and multilayer films of known solid-state materials.
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页码:7084 / 7094
页数:11
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