Cleavage and twinning in CuInSe2 crystals

被引:27
作者
Shukri, ZA
Champness, CH
机构
[1] Electrical Engineering Department, McGill University, Montreal, Que. H3A 2A7
来源
ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE | 1997年 / 53卷
关键词
D O I
10.1107/S0108768197004539
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A study was made of the cleavage and twinning character in single crystals of the chalcopyrite CuInSe2, copper indium diselenide, grown in the laboratory by a vertical Bridgman method. In this material, with a cia ratio of 2.006, the two main cleavage orientations were found to be {101} and {112} (corresponding to the descriptions {201} and {111}, respectively, in a cubic lattice). The plane identifications were made by measuring angles between adjacent cleaved surfaces and verifying the orientations by X-ray Laue and diffractometry. Cleavage was also found less frequently in a {110} plane, but here microscopic examination of the surface revealed it to consist of ridges in a [110] direction, where the microplanes on either side of a ridge edge were {112} planes. Twinning in the grown crystals was found, by angle measurements and X-ray diffraction, to occur along {112} planes, which is similar to the result in face-centred cubic, diamond and zinc blende lattices, where they are the corresponding {111} planes.
引用
收藏
页码:620 / 630
页数:11
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