Simulation of semiconductor quantum well lasers

被引:8
作者
Alam, MA
Hybertsen, MS
Smith, RK
Baraff, GA
Pinto, MR
机构
来源
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V | 1997年 / 2994卷
关键词
semiconductor laser; laser design; quantum well; carrier capture; numerical analysis; optical gain;
D O I
10.1117/12.275621
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A two dimensional bulk and quantum well laser simulation tool, based on the Bell Laboratories electron device simulator PADRE, has been developed. PADRE contains a suite of robust programs for obtaining self-consistent solutions of the Drift Diffusion equations. To this suite has been added programs for calculating the optical intensity inside the laser, the capture and emission rates between bound and free carriers, the interaction between the confined carriers and the optical field, and a set of new, powerful schemes for obtaining rapid convergence of the non-linear equations of the model. This paper describes the augmented program in its present form, gives examples of its present abilities and limitations, and discusses some illustrative results to show features of the simulation tool.
引用
收藏
页码:709 / 722
页数:14
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