Infrared laser desorption/ionization on silicon

被引：34

作者：

Bhattacharya, SH ^{[1
]}

Raiford, TJ ^{[1
]}

Murray, KK ^{[1
]}

机构：

[1] Louisiana State Univ, Dept Chem, Baton Rouge, LA 70803 USA

来源：

ANALYTICAL CHEMISTRY | 2002年 / 74卷 / 09期

关键词：

D O I：

10.1021/ac0112972

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Laser desorption/ionization from a single-crystal silicon surface was performed using a laser operating in the 3-mum region of the mid-infrared. Analyte molecules up to 6 kDa were ionized with no added matrix. As with ultraviolet desorption/ionization from porous silicon (DIOS), IR laser desorption from silicon does not produce matrix ions that can interfere with analysis of low-mass analytes. However, in contrast to UV DIOS, silicon porosity or roughness is not required for ionization using an IR laser. Mass spectra were obtained in the wavelength range between 2.8 and 3.5 mum, which is consistent with energy absorption by a hydrogen-bonded OH group. A mechanism based on desorption of adsorbed solvent molecules is postulated.

引用

页码：2228 / 2231

页数：4

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