Magnetic-field-induced crossover from Mott variable-range hopping to weakly insulating behavior

被引：18

作者：

Friedman, JR

Zhang, YZ

Dai, PH

Sarachik, MP

机构：

[1] Physics Department, City College of the City University of New York, New York

来源：

PHYSICAL REVIEW B | 1996年 / 53卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.53.9528

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In three-dimensional n-CdSe samples that obey Mott variable-range hopping, rho=rho(o)exp(T-o/T)(1/4), in the absence of a magnetic field, we report a field-induced crossover at low temperatures to a resistivity that exhibits a weak power-law divergence, rho=rho(o)T(-alpha), with an exponent a that decreases slowly with increasing field.

引用

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页码：9528 / 9531

页数：4

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