Interfacial reactions of Ni on Si1-xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

The interfacial reaction of Ni with relaxed Si1-xGex (x=0.2,0.3) films in the low temperature range, viz., 300-500 degreesC, has been investigated and compared with that of Ni with Si (i.e., x=0). Ni-2(Si1-xGex) and Ni-3(Si1-xGex)(2) were observed at 300 degreesC whereas a uniform film of Ni(Si1-xGex) was formed at 400 degreesC for both Si0.8Ge0.2 and Si0.7Ge0.3 substrates. At 500 degreesC, a mixed layer consisting of Ni(Si1-yGey) and Si1-zGez was formed with a relation of z>x>y. Sheet resistance measurement results show that the silicided film attains its lowest value at an annealing temperature of 400 degreesC. The approximate values of the resistivity of the corresponding uniform Ni(Si1-xGex) (x=0.2, 0.3) derived from the transmission electron microscope and sheet resistance results are 19 and 23 muOmega cm, respectively. (C) 2002 American Institute of Physics.