Charge carrier dynamics in CdSe nanocrystals: implications for the use of quantum dots in novel photovoltaics

被引:58
作者
Underwood, DF [1 ]
Kippeny, T [1 ]
Rosenthal, SJ [1 ]
机构
[1] Vanderbilt Univ, Dept Chem, Nashville, TN 37235 USA
关键词
D O I
10.1007/s100530170101
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The dynamics of photo-generated electrons and holes in CdSe quantum. dots have been studied using the femtosecond fluorescence upconversion technique, permitting an unambiguous examination of the excited state. The band edge emission shows an expected size dependence on the, decay rate. We find that the deep trap emission is coupled to thc band edge fluorescence, implicating surface states as important factors in the excited state lifetime of the hole. As a factor of the overall efficiency of solar cells, the rate of charge separation and the fate of the exciton are important considerations in the design of nanocrystal-based photovoltaic devices.
引用
收藏
页码:241 / 244
页数:4
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