Compression creep behaviour of precursor-derived Si-C-N ceramics

被引：31

作者：

Thurn, G ^{[1
]}

Canel, J

Bill, J

Aldinger, F

机构：

[1] Max Planck Inst Met Forsch, Stuttgart, Germany

[2] Univ Stuttgart, Inst Nichtmet Anorgan Mat, Pulvermet Lab, D-70569 Stuttgart, Germany

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 1999年 / 19卷 / 13-14期

关键词：

creep; precursors-organic; Si-C-N ceramics; mechanical properties; oxidation;

D O I：

10.1016/S0955-2219(99)00093-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The creep behaviour of Si-C-N materials derived from polyvinylsilazane (PVS) and polyhydridomethylsilazane (PHMS) precursors was investigated in the temperature range between 1200 and 1550 degrees C at compressive stresses between 30 and 250 MPa in air. Both materials show very similar creep behaviour. Decreasing strain rates with time were observed Even after 4x10(6) s creep deformation, stationary creep was not observed. Temperature dependence of the creep behaviour of such materials is very low. Dense passivating oxide layers were found on the surface of creep specimens tested in the temperature range up to 1500 degrees C. At 1550 degrees C active oxidation was observed. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：2317 / 2323

页数：7

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