ZnS-based photonic crystal phosphors fabricated using atomic layer deposition

被引：12

作者：

King, JS ^{[1
]}

Neff, CW

Blomquist, S

Forsythe, E

Morton, D

Summers, CJ

机构：

[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

[2] USA, Res Lab, Adelphi, MD 20783 USA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 2004年 / 241卷 / 03期

关键词：

D O I：

10.1002/pssb.200304287

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The infiltration by atomic layer deposition of three-dimensional opal structures has been investigated as a means of fabricating photonic crystal phosphors. ZnS:Mn infiltrated and inverse opals have been demonstrated with filling fractions >95%. Characterization of these structures by scanning electron microscopy, specular reflectance, and photoluminescence is reported. Specular reflectance measurements confirm successful infiltration, and demonstrate modification of the electromagnetic density of states consistent with calculated photonic (111) pseudo band gaps. Photoluminescence measurements reveal modification of emission by the photonic crystal consistent with angular dependent specular reflectance measurements. These results reveal a flexible and convenient route for fabricating high performance photonic crystal structures and optical microcavities. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA. Weinheim.

引用

页码：763 / 766

页数：4

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