Low temperature heat capacities of Ti3Al1.1C1.8, Ti4AlN3, and Ti3SiC2

被引:47
作者
Ho, JC [1 ]
Hamdeh, HH
Barsoum, MW
El-Raghy, T
机构
[1] Wichita State Univ, Dept Phys, Wichita, KS 67260 USA
[2] Drexel Univ, Dept Mat Engn, Philadelphia, PA 19104 USA
关键词
D O I
10.1063/1.371267
中图分类号
O59 [应用物理学];
学科分类号
摘要
For the binary Ti-Al system, an ordering transformation in Ti3Al has been shown to result in a significant lowering of the electronic heat-capacity coefficient, gamma, by removing electrons from conducting states. When gamma is normalized to a per Ti atom basis, the same tendency is found in low temperature calorimetric studies of the conducting ternary carbides Ti3Al1.1C1.8, Ti4AlN3, and Ti3SiC2 reported herein. As a consequence of C- or N-induced covalent-like bond formation, the Debye temperatures in these ternaries are in excess of 700 K. (C) 1999 American Institute of Physics. [S0021-8979(99)00819-1].
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页码:3609 / 3611
页数:3
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