Effect of screening by two-dimensional charge carriers on the binding energy of excitonic states in GaAs/AlGaAs quantum wells

被引：14

作者：

Gubarev, SI ^{[1
]}

Volkov, OV ^{[1
]}

Koval'skii, VA ^{[1
]}

Kulakovskii, DV ^{[1
]}

Kukushkin, IV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow Region, Russia

来源：

JETP LETTERS | 2002年 / 76卷 / 09期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1538293

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The spectrum of excitonic excited states in GaAs/AlGaAs quantum wells of different width is studied together with its change due to the screening of electron-hole interaction by two-dimensional electrons. The exciton binding energy decreases sharply with an increase in the concentration of two-dimensional electrons. The temperature dependence of screening parameters is studied for the ground and excited excitonic states down to ultralow temperatures T = 50 mK. (C) 2002 MAIK "Nauka / Interperiodica".

引用

页码：575 / 578

页数：4

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