ECRF experiments for local heating and current drive by fundamental O-mode launch from the low-field side on JT-60U

被引:29
作者
Ikeda, Y [1 ]
Ide, S [1 ]
Suzuki, T [1 ]
Kasugai, A [1 ]
Takahashi, K [1 ]
Kajiwara, K [1 ]
Isayama, A [1 ]
Oikawa, T [1 ]
Hamamatsu, K [1 ]
Kamada, Y [1 ]
Fujita, T [1 ]
Sakamoto, K [1 ]
Moriyama, S [1 ]
Seki, M [1 ]
Yoshino, R [1 ]
Imai, T [1 ]
Ushigusa, K [1 ]
Fujii, T [1 ]
机构
[1] Naka Fus Res Estab, Japan Atom Energy Res Inst, Naka, Ibaraki 3110193, Japan
关键词
D O I
10.1088/0029-5515/42/4/301
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
An electron cyclotron range of frequency (ECRF) program has been initiated to study the local heating and current drive in JT-60U. A frequency of 110 GHz was adopted to couple the fundamental O-mode from the low-field side with an oblique toroidal injection angle for the current drive. Experiments were performed at an injection power of similar to 1.5 MW by using three gyrotrons, each of which has generated the output power up to similar to 0.8 MW for 3 seconds. A strongly peaked T-e profile was observed and the central electron temperature increased up to similar to 15 keV when the O-mode was absorbed on the axis. The local electron heating clarified the significant difference in the heat pulse propagation between in the plasmas with internal transport barrier (ITB) and without. The driven current estimated by the Motional Stark Effect (MSE) diagnostic showed that the electron cyclotron (EC) waves drove the plasma current up to similar to 0.2 MA for an injected power of similar to 1.3 MW at the local electron temperature and density of T-e similar to6 keV, n(e) similar to 0.7 x 10(19) m(-3). The measured driven current near the axis was consistent with the theoretical prediction using a Fokker-Planck code. In the case of co-electron cyclotron current drive (ECCD), the sawtooth activity in neutral beam (NB) heated plasma was completely suppressed for 1.5 s with the deposition at the inversion radius, while the sawtooth was enhanced for counter-ECCD at the same deposition condition.
引用
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页码:375 / 382
页数:8
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