Triplet-to-singlet exciton formation in poly(p-phenylene-vinylene) light-emitting diodes -: art. no. 036601

被引：48

作者：

Lin, LC

Meng, HF ^{[1
]}

Shy, JT

Horng, SF

Yu, LS

Chen, CH

Liaw, HH

Huang, CC

Peng, KY

Chen, SA

机构：

[1] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 300, Taiwan

[4] Natl Tsing Hua Univ, Dept Chem Engn, Hsinchu 300, Taiwan

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 03期

关键词：

D O I：

10.1103/PhysRevLett.90.036601

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The triplet to singlet exciton formation ratio in a MEH-PPV light-emitting diode is measured by comparing the triplet-induced absorptions with optical and electric excitations at the same singlet exciton density. The ratio is a strong universal decreasing function of the averaged electric field. Using 4 ns for singlet to triplet intersystem crossing time, the ratio is significantly larger than the spin-independent value 3 at intermediate field but is reduced to about 2 for higher field.

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页数：4

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