Dependence of power and efficiency of AlGaN/GaN HEMT's on the load resistance for class B bias

被引：6

作者：

Kaper, V ^{[1
]}

Tilak, V ^{[1
]}

Green, B ^{[1
]}

Prunty, T ^{[1
]}

Smart, J ^{[1
]}

Eastman, LF ^{[1
]}

Shealy, SR ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

IEEE LESTER EASTMAN CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/LECHPD.2002.1146739

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The material properties of GaN and the AlGaN/GaN heterostructure such as high breakdown field and high sheet charge density, allow AlGaN/GaN HEMTs to be operated at significantly higher drain bias voltages as compared to other III-V compound semiconductor FETs [1]. As expected, larger RF voltage and current swings result in higher normalized output power at microwave frequencies. AlGaN/GaN HEMT's are capable of generating output power density in excess of 10W/min [2], [3] in X-band, which is at least an order of magnitude larger than what is obtainable with GaAs FETs. In this paper, we will discuss the effect of the load impedance on measured output power (P-out) and efficiency (eta) at various drain bias conditions in Class B mode. Dynamic loadlines extracted at the device's output are used for analysis of the trade-off between voltage and current swings at different load resistances and its effect on output power and efficiency.

引用

页码：118 / 125

页数：8