A common framework for soft and hard breakdown in ultrathin oxides based on the theory of point contact conduction

被引：9

作者：

Miranda, E ^{[1
]}

Suñé, J ^{[1
]}

Rodríguez, R ^{[1
]}

Nafría, M ^{[1
]}

Aymerich, X ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra, Spain

来源：

MICROELECTRONIC ENGINEERING | 1999年 / 48卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(99)00364-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an alternative explanation for the soft (SBD) and hard (HBD) breakdown conduction modes in ultrathin gate oxides based on the physics of mesoscopic conductors. It is shown that the Landauer approach applied to this system not only gives the observed HBD conductance values, which are those expected for a ballistic constriction in the linear and nonlinear regimes, but also a plausible mechanism for the SBD conduction.

引用

页码：171 / 174

页数：4

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