Grain boundary energy and grain growth in Al films: Comparison of experiments and simulations

被引:59
作者
Barmak, K [1 ]
Kim, J
Kim, CS
Archibald, WE
Rohrer, GS
Rollett, AD
Kinderlehrer, D
Ta'asan, S
Zhang, H
Srolovitz, DJ
机构
[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA
[2] Carnegie Mellon Univ, Dept Math Sci, Pittsburgh, PA 15213 USA
[3] Princeton Univ, Princeton Inst Sci & Technol Mat, Dept Mech & Aerosp Engn, Princeton, NJ 08540 USA
基金
美国国家科学基金会;
关键词
grain boundary energy; grain growth; Al; thin films; tilt boundaries;
D O I
10.1016/j.scriptamat.2005.11.060
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Relative free energies of (111) tilt boundaries in 1.7-mu m-thick A1 films were compared with boundary enthalpies obtained via molecular dynamics simulations. Grain growth studies in 25 and 100-nm-thick A1 films were compared with simulations. The sources of the differences between experimental and simulational results are discussed. (c) 2005 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:1059 / 1063
页数:5
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