Effect of Select Organic Compounds on Perchlorate Formation at Boron-doped Diamond Film Anodes

Rates of ClO4- formation from ClO3-. oxidation were investigated in batch experiments as a function of organic compounds (p-nitrophenol, p-benzoquinone, p-methoxyphenol, and oxalic acid) and current density using boron-doped diamond film anodes. Excluding organics, ClO4- formation rates ranged from 359 to 687 mu moles m(-2) min(-1) for current densities of 1-10 mA cm(-2). The presence of p-substituted phenols inhibited ClO4- formation rates between 13.0 and 99.6%. Results from a reactive-transport model of the diffuse layer adjacent to the anode surface indicate that competition between organics and ClO3 center dot for OH center dot within a reaction zone (0.02-0.96 mu m) adjacent to the anode controls ClO4- formation. Under kinetic-limited conditions (1.0 mA cm(-2)), organics reach the anode surface and substrates with higher OH center dot reaction rates demonstrate greater inhibition of perchlorate formation (IPF). At higher current densities (10 mA cm(-2)), organic compound oxidation becomes mass transfer-limited and compounds degrade a small distance from the anode surface (similar to 0.26 mu m for p-methoxyphenol). Therefore, OH center dot scavenging does not occur at the anode surface and IPF values decrease. Results provide evidence for the existence of desorbed OH center dot near the anode surface and highlight the importance of controlling reactor operating conditions to limit ClO4- production during anodic treatment of organic compounds.