Hydrogen passivation and ozone oxidation of silicon surface

被引：5

作者：

Kurokawa, A ^{[1
]}

Nakamura, K ^{[1
]}

Ichimura, S ^{[1
]}

机构：

[1] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

HYDROGEN IN SEMICONDUCTORS AND METALS | 1998年 / 513卷

关键词：

D O I：

10.1557/PROC-513-37

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The oxidation of H/Si(100) and H/Si(111) with high concentration. ozone gas was investigated with X-ray photoelectron spectroscopy(XPS). The ozone oxidation of partially hydride-covered surface was observed. The hydrogen termination reduced the rate of oxygen insertion into silicon backbond. The reduction of oxygen insertion rate by the H-termination for H/Si(100) was larger than that for H/Si(111). The dissociation rate of ozone molecule on H/Si was estimated to be similar or equal to 0.2 with a directional mass analyzer.

引用

页码：37 / 42

页数：6