Crystal growth melt flow control by means of magnetic fields

被引：29

作者：

Galindo, V

Gerbeth, G

von Ammon, W

Tomzig, E

Virbulis, J

机构：

[1] Forschungszentrum Rossendorf EV, D-01314 Dresden, Germany

[2] Wacker Siltron AG, D-84479 Burghausen, Germany

来源：

ENERGY CONVERSION AND MANAGEMENT | 2002年 / 43卷 / 03期

关键词：

crystal growth; magnetic fields; flow control;

D O I：

10.1016/S0196-8904(01)00100-5

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

Contactless melt flow control is important in many crystal growth technologies. Typically, steady magnetic fields are used to damp convective flow. On the other hand active flow driving forces like in a rotating magnetic field can be of stabilizing character, too. We present numerical results for the combined action of steady and alternating magnetic fields for the silicon Czochralski crystal growth process. The melt flow is determined by various flow driving sources: besides the thermal convection and rotation of crystal and crucible, there are also the influence of driving and/or damping electromagnetic forces and the thermocapillarity-driven flow at the free deformable melt surface. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：309 / 316

页数：8

共 6 条

[1] Convective temperature fluctuations in liquid gallium in dependence on static and rotating magnetic fields [J].