Microrod and microtube formation by electrodeposition of metal into ordered macropores prepared in p-type silicon

被引:34
作者
Kobayashi, K [1 ]
Harraz, FA
Izuo, S
Sakka, T
Ogata, YH
机构
[1] Kyoto Univ, Inst Adv Energy, Uji, Kyoto 6110011, Japan
[2] Cent Met Res & Dev Inst, Adv Mat Technol Dept, Cairo 11421, Egypt
[3] Mitsubishi Electr Corp, Adv Res & Dev Ctr, Amagasaki, Hyogo 6618661, Japan
关键词
D O I
10.1149/1.2168379
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Copper and nickel electrodeposition into ordered macropores prepared in p-type silicon has been studied in aqueous solutions containing cupric and nickel ions, respectively. When a macroporous silicon template was cathodically polarized in 0.1 M cupric sulfate solution, copper was deposited preferentially at the pore bottom in the dark, whereas the deposition was found to proceed not only at the pore bottom but also partially on the pore wall under the back side illumination. In contrast, the deposition of nickel in 0.1 M nickel sulfate solution was not possible in the dark, while deposition occurred uniformly on the entire surface of the pore wall under the back side illumination. Dissolution of silicon templates by the alkaline etching process led to the formation of copper microrods and nickel microtubes. The deposition behavior of both metals was compared and this discrepancy was discussed.
引用
收藏
页码:C218 / C222
页数:5
相关论文
共 32 条
[1]   Permeated porous silicon for hydrocarbon sensor fabrication [J].
Angelucci, R ;
Poggi, A ;
Dori, L ;
Cardinali, GC ;
Parisini, A ;
Tagliani, A ;
Mariasaldi, M ;
Cavani, F .
SENSORS AND ACTUATORS A-PHYSICAL, 1999, 74 (1-3) :95-99
[2]  
[Anonymous], PHYS SEMICONDUCTOR D
[3]  
Birner A, 1998, PHYS STATUS SOLIDI A, V165, P111, DOI 10.1002/(SICI)1521-396X(199801)165:1<111::AID-PSSA111>3.0.CO
[4]  
2-T
[5]   Pore formation mechanisms for the Si-HF system [J].
Carstensen, J ;
Christophersen, M ;
Föll, H .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 :23-28
[6]   Crystal orientation dependence and anisotropic properties of macropore formation of p- and n-type silicon [J].
Christophersen, M ;
Carstensen, J ;
Rönnebeck, S ;
Jäger, C ;
Jäger, W ;
Föll, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2001, 148 (06) :E267-E275
[7]   Minority carrier lifetime degradation in boron-doped Czochralski silicon [J].
Glunz, SW ;
Rein, S ;
Lee, JY ;
Warta, W .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (05) :2397-2404
[8]   Immersion plating of copper onto porous silicon with different thickness [J].
Hamm, D ;
Sakka, T ;
Ogata, YH .
ELECTROCHIMICA ACTA, 2004, 49 (27) :4949-4955
[9]   Transition during the growth of nanoporous columns in p-type silicon: the origin of macropores [J].
Hamm, D ;
Sakka, T ;
Ogata, YH .
ELECTROCHEMISTRY, 2003, 71 (10) :853-859
[10]   Pore filling of macropores prepared in p-type silicon by copper deposition [J].
Harraz, FA ;
Kamada, K ;
Sasano, J ;
Izuo, S ;
Sakka, T ;
Ogata, YH .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (08) :1683-1687