Domain structure of epitaxial CaHfO3 gate insulator films on SrTiO3

被引：37

作者：

Shibuya, K

Ohnishi, T

Lippmaa, M

Kawasaki, M

Koinuma, H

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[2] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[4] Combinatorial Mat Explorat & Technol, Tsukuba, Ibaraki 3050044, Japan

[5] Natl Inst Adv Ind Sci & Technol, Correlated Electron Res Ctr, Tsukuba, Ibaraki 3050046, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 12期

关键词：

D O I：

10.1063/1.1689394

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin CaHfO3 films were grown on (100) and (110)-oriented SrTiO3 surfaces with the aim of obtaining an insulator film for epitaxial oxide device design. We show that films grown on the (100) surface of SrTiO3 have a multidomain structure, which increases film roughness and decreases the maximum breakdown field of the insulator. Single-domain films were obtained on the SrTiO3 (110) surface. These films had a breakdown field of 5 MV/cm and a dielectric constant of epsilon(r)=16 to 17 at room temperature. (C) 2004 American Institute of Physics.

引用

页码：2142 / 2144

页数：3

共 10 条

[1] Dopant influence on dielectric losses, leakage behaviour, and resistance degradation of SrTiO3 thin films [J].