Pixel-less infrared imaging based on the integration of an n-type quantum-well infrared photodetector with a light-emitting diode

被引：29

作者：

Dupont, E ^{[1
]}

Liu, HC

Buchanan, M

Wasilewski, ZR

St-Germain, D

Chevrette, P

机构：

[1] Natl Res Council, Inst Microstruct Sci, Ottawa, ON K1A 0R60, Canada

[2] Ctr Rech Def Valcartier, Val Belair, PQ K1A 1X5, Canada

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 04期

关键词：

D O I：

10.1063/1.124442

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This letter presents the recent developments of large-area focal plane "pseudo" arrays for infrared (IR) imaging. The devices are based on the epitaxial integration of an n-type mid-IR (8-10 mu m) GaAs/AlGaAs quantum-well detector with a light-emitting diode. The increase of spontaneous emission by the midinfrared-induced photocurrent is detected with a charge-coupled device camera in the reflection configuration. The mid-IR image of a blackbody object is up-converted to a near-IR transformed image with very small distortion. (C) 1999 American Institute of Physics. [S0003-6951(99)02030-6].

引用

页码：563 / 565

页数：3

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