Deep blue phosphorescent organic light-emitting diodes using a Si based wide bandgap host and an Ir dopant with electron withdrawing substituents

被引：87

作者：

Kim, Sung Hyun ^{[2
]}

Jang, Jyongsik ^{[2
]}

Lee, Seok Jong ^{[3
]}

Lee, Jun Yeob ^{[1
]}

机构：

[1] Dankook Univ, Dept Polymer Sci & Engn, Kyeonggi Do 4448701, South Korea

[2] Seoul Natl Univ, Sch Chem & Biol Engn, Seoul 151742, South Korea

[3] LG Philips LCD, Gumi Si 730726, Gyungsangbuk Do, South Korea

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 02期

关键词：

Blue phosphorescent device; Wide triplet bandgap; Deep blue;

D O I：

10.1016/j.tsf.2008.08.156

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A deep blue phosphorescent organic light-emitting diode was developed using a diphenyldi(4-(9-carbazoly) lphenyl)silane(SiCa) host material and a tris((3,5-difluoro-4-cyanophenyl)pyridine) iridium(FCNlr) dopant material. Triplet bandgap of the SiCa was 3.0 eV, while triplet bandgap of the FCNlr was 2.8 eV. Light-emitting performances of blue devices were investigated by changing doping concentration of the FCNlr and a pure blue emission with a color coordinate of (0.15, 0.19) could be obtained. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：722 / 726

页数：5

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