Mn impurity in Ga1-xMnxAs epilayers

被引：109

作者：

Szczytko, J

Twardowski, A

Swiatek, K

Palczewska, M

Tanaka, M

Hayashi, T

Ando, K

机构：

[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, Warsaw, Poland

[3] Inst Elect Mat Technol, PL-01919 Warsaw, Poland

[4] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 113, Japan

[5] Electrotech Lab, Tsukuba, Ibaraki 305, Japan

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.60.8304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electron paramagnetic resonance was measured in Ga1-xMnxAs/GaAs epilayers with 0.002 less than or equal to x less than or equal to 0.01. Data were taken as a function of magnetic field orientation at low temperatures. The observed spectra were attributed to ionized Mn acceptor A(-). No neutral Mn acceptor centers were detected. The observed anisotropy of A(-) is interpreted in terms of sizable demagnetizing fields resulting from ferromagnetic coupling between Mn ions. [S0163-1829(99)07235-5].

引用

页码：8304 / 8308

页数：5

共 56 条

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ADRIANOW DG, 1983, FIZ TEKH POLUPROV, V17, P810

[2]

ADRIANOW DG, 1984, FIZ TEKH POLUPROV, V18, P262

[3] Ferromagnetism and its stability in the diluted magnetic semiconductor (In,Mn)As [J].