Optical detection of magnetic resonance in electron-irradiated GaN

被引:96
作者
Linde, M
Uftring, SJ
Watkins, GD
Harle, V
Scholz, F
机构
[1] UNIV STUTTGART,INST PHYS 4,D-70550 STUTTGART,GERMANY
[2] LEHIGH UNIV,DEPT PHYS,BETHLEHEM,PA 18015
来源
PHYSICAL REVIEW B | 1997年 / 55卷 / 16期
关键词
D O I
10.1103/PhysRevB.55.R10177
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Four new optically detected magnetic resonances are observed in photoluminescence bands at similar to 0.85 and similar to 0.93 eV, which are produced in epitaxial wurtzite films of GaN by 2.5-MeV electron irradiation. One of these reveals a resolved hyperfine interaction with a single Ga nucleus, indicating a displaced Ga atom of some kind. It is tentatively identified as a complex involving interstitial Ga-i(2+).
引用
收藏
页码:10177 / 10180
页数:4
相关论文
共 17 条
[1]   ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].
DINGLE, R ;
SELL, DD ;
STOKOWSKI, SE ;
ILEGEMS, M .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1211-+
[2]   DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J].
DINGLE, R ;
ILEGEMS, M .
SOLID STATE COMMUNICATIONS, 1971, 9 (03) :175-&
[3]   OPTICALLY DETECTED MAGNETIC-RESONANCE OF GAN FILMS GROWN BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION [J].
GLASER, ER ;
KENNEDY, TA ;
DOVERSPIKE, K ;
ROWLAND, LB ;
GASKILL, DK ;
FREITAS, JA ;
KHAN, MA ;
OLSON, DT ;
KUZNIA, JN ;
WICKENDEN, DK .
PHYSICAL REVIEW B, 1995, 51 (19) :13326-13336
[4]  
HOFFMANN DM, 1996, MATER RES SOC S P, V395, P619
[5]  
Kaufmann U, 1996, MATER RES SOC SYMP P, V395, P633
[6]   IDENTIFICATION OF THE GA INTERSTITIAL IN ALXGA1-XAS BY OPTICALLY DETECTED MAGNETIC-RESONANCE [J].
KENNEDY, TA ;
SPENCER, MG .
PHYSICAL REVIEW LETTERS, 1986, 57 (21) :2690-2693
[7]   HYPERFINE COUPLING-CONSTANTS AND ATOMIC PARAMETERS FOR ELECTRON-PARAMAGNETIC RESONANCE DATA [J].
KOH, AK ;
MILLER, DJ .
ATOMIC DATA AND NUCLEAR DATA TABLES, 1985, 33 (02) :235-253
[8]   Time-resolved ODMR measurements on the ''yellow luminescence'' in MOCVD-grown GaN films [J].
Koschnick, FK ;
Spaeth, JM ;
Glaser, ER ;
Doverspike, K ;
Rowland, LB ;
Gaskill, DK ;
Wickenden, DK .
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- :37-41
[9]  
KOSCHNICK FK, 1996, PHYS REV B, V54
[10]  
KUNZER M, 1994, MATER SCI FORUM, V143-, P87, DOI 10.4028/www.scientific.net/MSF.143-147.87