Strain effect and the phase diagram of La1-xBaxMnO3 thin films -: art. no. 184404

被引：187

作者：

Zhang, J ^{[1
]}

Tanaka, H ^{[1
]}

Kanki, T ^{[1
]}

Choi, JH ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

PHYSICAL REVIEW B | 2001年 / 64卷 / 18期

关键词：

D O I：

10.1103/PhysRevB.64.184404

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report magnetic and transport properties of La1-xBaxMnO3 (x = 0.05-0.33) epitaxial thin films. Compared with the corresponding bulk materials. the ferromagnetic transition temperature is reduced in the compressive strained La1-xBaxMnO3 thin films with x = 0.3 and 0.33, but enhanced significantly in the tensile strained thin films with x less than or equal to 0.2. Especially, ferromagnetism and low field colossal magnetoresistance effect were observed around room temperature in x = 0.1 thin film, and as x = 0.05, a spin-canting insulating state in bulk shifts to ferromagnetic metallic state in thin film. The phase diagram of La1-xBaxMnO3 thin films was obtained, and strain effect on these novel properties was discussed.

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