Effects of post-annealing temperatures and ambient atmospheres on the electrical properties of ultrathin (Ba,Sr)TiO3 capacitors

被引：18

作者：

Chen, PC ^{[1
]}

Miki, H ^{[1
]}

Shimamoto, Y ^{[1
]}

Matsui, Y ^{[1
]}

Hiratani, M ^{[1
]}

Fujisaki, Y ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 185, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 9B期

关键词：

(Ba; Sr)TiO3; post-annealing; LSI; platinum; capacitor; leakage current;

D O I：

10.1143/JJAP.37.5112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrathin (Ba,Sr)TiO3 (BST) film capacitors with a Pt/Ba0.5Sr0.5TiO3(30 nm)/Pt/TiN/Si structure were fabricated. To investigate the effects of annealing temperatures, capacitors were annealed in Bowing Ar or O-2 at temperatures ranging from 400 degrees C to 600 degrees C for 30 min. The electrical properties of the annealed samples were strongly dependent on the annealing temperatures. In the capacitors annealed at 500 degrees C (in Ar and O-2) and 550 degrees C (in O-2), the leakage current decreased to a level of 10(-8) A/cm(2) when the bias voltage was +/-1.5 V. In the as-deposited sample, the maximum capacitance appeared at a bias voltage of -1 V. However, the maximum capacitance increased and appeared at the zero bias voltage after annealing. These phenomena are believed to be defect-related (due to oxygen vacancies). The annealing atmospheres were also found to have an effect on preserving the morphology of the Pt electrodes.

引用

页码：5112 / 5117

页数：6

共 20 条

[1] Domain switching and spatial dependence of permittivity in ferroelectric thin films [J].