The roles of electric fields and illumination levels in passivating the surface of silicon solar cells

被引：5

作者：

Bai, YB

Phillips, JE

Barnett, AM

机构：

[1] Univ Delaware, Dept Elect Engn, Newark, DE 19716 USA

[2] Univ Delaware, Inst Energy Convers, Newark, DE 19716 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 08期

关键词：

field effect; MOS capacitor; silicon solar cell; surface passivation;

D O I：

10.1109/16.704379

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The back surface recombination velocity (BSRV) of operating silicon solar cells has been modulated by an externally applied gate voltage and illumination through a semi-transparent MOS structure. All three voltage bias modes (accumulation, depletion and inversion) of this MOS system are examined. In addition, the effects of gate bias voltage, illumination (or carrier injection level) and oxide charge on the BSRV and solar cell performance are investigated. The effects of electric field and illumination are found to play key roles in achieving a low BSRV, Methods of achieving a low BSRV with this structure are described.

引用

页码：1784 / 1790

页数：7

共 17 条

[1]

Aberle A. G., 1993, Progress in Photovoltaics: Research and Applications, V1, P133, DOI 10.1002/pip.4670010204

[2]

Aberle A. G., 1994, Progress in Photovoltaics: Research and Applications, V2, P265, DOI 10.1002/pip.4670020402

[3] FIELD-EFFECT PASSIVATION OF HIGH-EFFICIENCY SILICON SOLAR-CELLS [J].