Synthesis of SnS Nanoparticles by SILAR Method for Quantum Dot-Sensitized Solar Cells

被引：42

作者：

Tsukigase, Hiroki ^{[1
]}

Suzuki, Yoshikazu ^{[1
]}

Berger, Marie-Helene ^{[2
]}

Sagawa, Takashi ^{[1
]}

Yoshikawa, Susumu ^{[1
]}

机构：

[1] Kyoto Univ, Inst Adv Energy, Kyoto 6110011, Japan

[2] MINES ParisTech, Ctr Mat, CNRS, UMR 7633, F-91003 Evry, France

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 03期

关键词：

Quantum Dot-Sensitized Solar Cell (QDSSC); Dye-Sensitized Solar Cells (DSC); Tin Sulfide (SnS); Successive Ionic Layer Adsorption and Reaction (SILAR) Method; ZnS Coating; NANOTUBE-ARRAY PHOTOELECTRODES; IONIC-LAYER ADSORPTION; SULFIDE THIN-FILMS; PHOTOVOLTAIC CELLS; OPTICAL-PROPERTIES; TIN(II) SULFIDE; SHAPE CONTROL; TIO2; DEPOSITION; SIZE;

D O I：

10.1166/jnn.2011.3582

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

SnS-sensitized TiO2 electrodes were applied in quantum dot-sensitized solar cells (QDSSCs) which are environmentally more favorable than conventional Cd or Pb-chalcogenide-sensitized electrodes. SnS nanoparticles were well-distributed over the surface of TiO2 nanoparticles by the successive ionic layer adsorption and reaction (SILAR) method. Deposited SnS nanoparticles had diameter about 3 nm. Under AM1.5 irradiation with 100 mW/cm(2) light intensity (at 1 sun), the energy conversion efficiency of obtained cells reached a value of 0.21% (0.25 cm(2)) at SILAR coating cycles of 5. In addition, the photovoltaic performance was improved by additional ZnS coating on the surface of SnS-sensitized TiO2 electrodes.

引用

页码：1914 / 1922

页数：9

共 40 条

[1] PREDICTION OF FLATBAND POTENTIALS AT SEMICONDUCTOR-ELECTROLYTE INTERFACES FROM ATOMIC ELECTRONEGATIVITIES [J].