Role of van der Waals bonding in the layered oxide V2O5: First-principles density-functional calculations

被引:74
作者
Londero, Elisa [1 ]
Schroder, Elsebeth [1 ]
机构
[1] Chalmers Univ Technol, MC2, SE-41296 Gothenburg, Sweden
基金
瑞典研究理事会;
关键词
GENERALIZED GRADIENT APPROXIMATION; ELECTRONIC-PROPERTIES; VANADIUM-OXIDES; THIN-FILMS; EXCHANGE; SURFACES;
D O I
10.1103/PhysRevB.82.054116
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Sparse matter is characterized by regions with low electron density and its understanding calls for methods to accurately calculate both the van der Waals (vdW) interactions and other bonding. Here we present a first-principles density-functional theory (DFT) study of a layered oxide (V2O5) bulk structure which shows charge voids in between the layers and we highlight the role of the vdW forces in building up material cohesion. The result of previous first-principles studies involving semilocal approximations to the exchange-correlation functional in DFT gave results in good agreement with experiments for the two in-plane lattice parameters of the unit cell but overestimated the parameter for the stacking direction. To recover the third parameter we include the nonlocal (dispersive) vdW interactions through the vdW-DF method [M. Dion, H. Rydberg, E. Schroder, D. C. Langreth, and B. I. Lundqvist, Phys. Rev. Lett. 92, 246401 (2004)] testing also various choices of exchange forms. We find that the transferable first-principles vdW-DF calculations stabilizes the bulk structure. The vdW-DF method gives results in fairly good agreement with experiments for all three lattice parameters.
引用
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页数:8
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