Direct synthesis of aligned silicon carbide nanowires from the silicon substrates

被引:50
作者
Kim, HY
Park, J [1 ]
Yang, H
机构
[1] Korea Univ, Dept Chem, Jochiwon 339700, South Korea
[2] Hanyang Univ, Coll Engn Sci, Ansan 425791, South Korea
关键词
D O I
10.1039/b210027d
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Aligned silicon carbide nanowires were synthesized directly from the silicon substrates via a novel catalytic reaction with a methane-hydrogen mixture at 1100 degreesC, with a mean diameter of 40 nm and length of 500 mum; they consist of a single-crystalline zinc blende structure crystal in the [111] growth direction; X-ray diffraction, Raman, and infrared spectroscopy confirm the synthesis of high-purity silicon carbide nanowires.
引用
收藏
页码:256 / 257
页数:2
相关论文
共 18 条
[1]   SYNTHESIS AND CHARACTERIZATION OF CARBIDE NANORODS [J].
DAI, HJ ;
WONG, EW ;
LU, YZ ;
FAN, SS ;
LIEBER, CM .
NATURE, 1995, 375 (6534) :769-772
[2]   Vibrational spectroscopy of SiC thin films deposited by excimer laser ablation [J].
Hobert, H ;
Dunken, HH ;
Peiter, G ;
Stier, W ;
Diegel, M ;
Stafast, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 69 (01) :69-76
[3]   Synthesis and characterization of SiC nanowires through a reduction-carburization route [J].
Hu, JQ ;
Lu, QK ;
Tang, KB ;
Deng, B ;
Jiang, RR ;
Qian, YT ;
Yu, WC ;
Zhou, GE ;
Liu, XM ;
Wu, JX .
JOURNAL OF PHYSICAL CHEMISTRY B, 2000, 104 (22) :5251-5254
[4]   PRODUCTION OF FINE, HIGH-PURITY BETA SILICON-CARBIDE POWDERS [J].
KRSTIC, VD .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (01) :170-174
[5]   Growth of SiC nanorods at low temperature [J].
Lu, QY ;
Hu, JQ ;
Tang, KB ;
Qian, YT ;
Zhou, G ;
Liu, XM ;
Zhu, JS .
APPLIED PHYSICS LETTERS, 1999, 75 (04) :507-509
[6]  
Massalski TB., 1992, BINARY ALLOY PHASE D
[7]   LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].
MORKOC, H ;
STRITE, S ;
GAO, GB ;
LIN, ME ;
SVERDLOV, B ;
BURNS, M .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398
[8]   RAMAN-SCATTERING OF SIC - APPLICATION TO THE IDENTIFICATION OF HETEROEPITAXY OF SIC POLYTYPES [J].
OKUMURA, H ;
SAKUMA, E ;
LEE, JH ;
MUKAIDA, H ;
MISAWA, S ;
ENDO, K ;
YOSHIDA, S .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) :1134-1136
[9]   Molten gallium as a catalyst for the large-scale growth of highly aligned silica nanowires [J].
Pan, ZW ;
Dai, ZR ;
Ma, C ;
Wang, ZL .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2002, 124 (08) :1817-1822
[10]  
Pan ZW, 2000, ADV MATER, V12, P1186, DOI 10.1002/1521-4095(200008)12:16<1186::AID-ADMA1186>3.0.CO