InAs nanowires grown by MOVPE

被引：31

作者：

Dick, Kimberly A. ^{[1
]}

Deppert, Knut ^{[1
]}

Samuelson, Lars ^{[1
]}

Seifert, Werner ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / SPEC. ISS期

关键词：

nanostructures; metalorganic vapour phase epitaxy; semiconducting III-V material;

D O I：

10.1016/j.jcrysgro.2006.10.083

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial growth of Au-assisted InAs nanowires using metal organic vapour phase epitaxy is investigated. The growth rate and morphology of nanowires as a function of growth temperature, substrate material and precursor flows are discussed. It is observed that tapering increases with both In and As precursor flows, but decreases with temperature. Finally, we report growth of InAs nanowires on both InAs and InP substrates, with those grown on InAs substrates exhibiting more tapered shape. (c) 2006 Elsevier B.V. All rights reserved.

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页码：631 / 634

页数：4

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