Vertical capacitive SiBARs

被引：39

作者：

Pourkamali, S ^{[1
]}

Ho, GK ^{[1
]}

Ayazi, F ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

MEMS 2005 MIAMI: TECHNICAL DIGEST | 2005年

关键词：

D O I：

10.1109/MEMSYS.2005.1453904

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work introduces high frequency, vertical silicon bulk acoustic resonators (SiBAR). A combination of the new resonator structures with much larger transduction area and the HARPSS fabrication process is used to demonstrate high frequency capacitive resonators with significantly lower impedances compared to the previous capacitive resonators. Impedances as low as a few kilo-Ohms and quality factors in the range of 20,000 to 50,000 in the VHF range have been achieved for the first thickness mode of the fabricated resonators. Resonant frequencies as high as 983MHz are demonstrated for the third thickness modes of the capacitive SiBARs.

引用

页码：211 / 214

页数：4

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