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Silicon JFETs for cryogenic applications
被引：1
作者：
Das, NC
[1
]
Babu, S
[1
]
Jhabvala, MD
[1
]
机构：
[1] Hughes STX, Lanham, MD 20706 USA
来源：
PHOTODETECTORS: MATERIALS AND DEVICES III
|
1998年
/
3287卷
关键词：
SiJFET;
cryogenics;
low noise;
preamplifier;
and detectors;
D O I：
10.1117/12.304475
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ;
080401 ;
081102 ;
摘要：
A process far fabrication of low-frequency, low-noise, low-power silicon JFETs for cryogenic operation has been developed. Commercially available silicon JFETs exhibit very high low frequency and 1/f noise at liquid nitrogen temperature (77K). We report on process optimization and effect of high temperature oxidation and drive-in process on noise performance of these devices. These silicon JFETs were designed for operation at 77K. In this paper, we report the noise performance and its relation to the well-known complex Oxygen-Vacancy (O-V) A-center that has a trap level of 0.18 eV below the conduction band. These devices were developed for use in the photo-diode assembly of NASAs Gravity Probe B (GP-B) mission telescope.
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页码：146 / 149
页数：4
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