Comparison of interfacial and electrical characteristics of HfO2 and HfAlO high-k dielectrics on compressively strained Si1-xGex

被引：40

作者：

Curreem, KKS

Lee, PF

Wong, KS

Dai, JY ^{[1
]}

Zhou, MJ

Wang, J

Li, Q

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

[2] Chinese Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 18期

关键词：

D O I：

10.1063/1.2201887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Interfacial reactions and electrical properties of HfO2 and HfAlO high-k gate dielectric films on strained Si1-xGex (x=17%) fabricated by pulsed-laser deposition were investigated. The dielectric films were characterized by x-ray photoelectron spectroscopy, transmission electron microscopy, and electrical measurements. We found that alloying of HfO2 with alumina can reduce the GeOx formation at the interfacial layer and thus reduce the Ge diffusion during the film post-thermal annealing process. Such suppression effect significantly improved the electrical properties of the dielectric films. (c) 2006 American Institute of Physics.

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页数：3

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