Transport properties of InSb and InAs thin films on GaAs substrates

被引：26

作者：

Okamoto, A ^{[1
]}

Geka, H ^{[1
]}

Shibasaki, I ^{[1
]}

Yoshida, K ^{[1
]}

机构：

[1] Asahi Kasei Corp, Strateg Res & Dev, Fuji, Shizuoka 4168501, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期

关键词：

doping; interfaces; molecular beam epitaxy; semiconducting indium antimonide; semiconducting indium arsenide;

D O I：

10.1016/j.jcrysgro.2004.12.077

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The heterointerfaces in InAs and InSb thin films grown on GaAs were found to affect the temperature dependence of the film's electrical properties such as electron mobility, electron density, and resistivity. The InAs and Irish surfaces of the films, which act as heterointerfaces with air, were found to similarly affect the electrical properties. It was found that the electron mobility of both InAs and InSb films grown on GaAs substrates has a three-layer structure. © 2005 Elsevier B.V. All rights reserved.

引用

页码：604 / 609

页数：6

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