Free-standing AlGaAs thermopiles for improved infrared sensor design

被引：7

作者：

Dehe, A

Hartnagel, HL

机构：

[1] Technische Hochschule Darmstadt, Institut für Hochfrequenztechnik

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 08期

关键词：

D O I：

10.1109/16.506768

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Our group introduced the GaAs/AlGaAs material system for various integrated and micromachined thermoelectric sensors [1]-[6]. Investigating the material parameters of AlxGa1-xAs in detail indicates that this material system can be optimized with respect to thermoelectric properties, We demonstrate that figures of merit Z as high as 1.4 x 10(-4) K-1 are predicted. Simultaneously, this material is compatible for micromachining purposes. The presented infrared sensor is optimized with respect to the material parameter and design. The sensors do not need a supporting membrane and hence undesirable parallel thermal conductance is reduced. Sensors of different geometrical dimensions have been fabricated and compared. Black body measurements result in responsivities up to R = 365 V/W and maximum relative detectivities of D* = 6.9 x 10(8) cm root Hz/W which compare to the predicted performance.

引用

页码：1193 / 1199

页数：7

共 22 条

[11] MICROMECHANICALLY STRUCTURIZED SENSORS ON GAAS - AN INTEGRATED ANEMOMETER [J].