Preparation of nanometer-scale iron dots on insulating layer

被引:5
作者
Ernult, F. [1 ]
Mitani, S. [1 ,2 ]
Nagano, Y. [1 ]
Takanashi, K. [1 ,2 ]
机构
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan
关键词
Magnetic dots; Self-organized growth; Iron; Magnesium oxide; Single electron tunneling; Coulomb blockade;
D O I
10.1016/S1468-6996(03)00050-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We studied the preparation of nanometer-sized magnetic dots on MgO tunnel barriers. The samples were formed by depositing Fe thin layers, which exhibited a 3D Volmer-Weber growth on MgO (001) substrates. The current-voltage characteristics were then measured using a scanning tunneling microscope. By comparing different preparation techniques such as the oxidation of a metallic Mg layer and direct deposition of MgO by electron beam evaporation, we found that direct deposition was the best way to achieve flat MgO surfaces and assemblies of dots with uniform heights. The growth of the Fe dots seems to be mainly governed by the density of surface defects of the buffer, which act as nucleation sites. The density of these defects appears to be modified by the insertion of an iron electrode prior to the deposition of the MgO layer. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:383 / 389
页数:7
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