Spin diffusion in doped semiconductors: The role of Coulomb interactions

被引:61
作者
D'Amico, I
Vignale, G
机构
[1] Inst Sci Interchange, I-10133 Turin, Italy
[2] Univ Missouri, Dept Phys, Columbia, MO 65211 USA
来源
EUROPHYSICS LETTERS | 2001年 / 55卷 / 04期
关键词
D O I
10.1209/epl/i2001-00453-y
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We examine the effect of Coulomb interaction on the mobility and diffusion of spin packets in doped semiconductors. We nd that the diffusion constant is reduced, relative to its non-interacting value, by the combined effect of Coulomb-enhanced spin susceptibility and spin Coulomb drag. In ferromagnetic semiconductors, the spin diffusion constant vanishes at the ferromagnetic transition temperature.
引用
收藏
页码:566 / 572
页数:7
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